基于高谐波抑制混合技术的倍频器

Álvaro Díez López, Amparo Herrera Guardado, Juan Carlos Pérez Ambrojo
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引用次数: 0

摘要

提出了一种基于SiGe双极晶体管的宽带倍频器。这些倍频器的主电路由一个衰减器、一个偏置网络和一个带通滤波器组成,带通滤波器在输出端选择所需的谐波。所设计的倍频器可以将2-3 GHz的输入信号转换为4-6 GHz的信号,对基频和三次谐波分别有59 dB和41 dB的高抑制。该三倍器可将2.3-2.7 GHz的输入信号转换为7-8 GHz的信号,对基频、二次谐波和四次谐波的抑制分别为68 dB、52 dB和43 dB。
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Frequency Multipliers Based on Hybrid Technology with High Harmonic Suppression
A wideband frequency multipliers using SiGe bipolar transistors are proposed in this paper. The main circuit of these frequency multipliers consists of an attenuator followed by a bias network and a band pass filter which selects the desired harmonic at the output. The designed doubler can convert a 2–3 GHz input signal to a 4–6 GHz signal, with high suppressions of 59 dB, and 41 dB on the fundamental, and the third harmonic respectively. The tripler can convert a 2.3-2.7 GHz input signal to a 7–8 GHz signal, with suppressions of 68 dB, 52 dB, and 43 dB on the fundamental, the second, and fourth harmonics respectively.
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