Zehong Li, M. Ren, Meng Zhang, Shijiang Yu, Jin-ping Zhang, Bo Zhang, Zhaoji Li
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引用次数: 4
摘要
提出并演示了一种新型埋层整流器(BLR)，其特点是埋在n通道下的p层为大多数载流子创造了一个屏障，其高度可以通过阳极电压调制。由于超低势垒，正向导通电压(VF)大大降低。埋置p层也显著提高了阻流能力，降低了漏电流。实验表明，新型100 v BLR具有0.1V的超低VF和短于20ns的快速反向恢复时间(Trr)。
Innovative Buried Layer Rectifier with 0.1V ultralow forward conduction voltage
A novel Buried Layer Rectifier (BLR) is proposed and demonstrated, which features P-layers buried under the N-channel to create a barrier for majority carriers whose height can be modulated by the anode voltage. The forward conduction voltage (VF) is considerably reduced due to the ultra-low barrier. The buried P-layers also significantly enhance the blocking capability and reduce the leakage current. Experiments show that the novel 100-V BLR exhibits an ultra-low VF of 0.1V and a fast reverse recovery time (Trr) shorter than 20ns.
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