一种精确模拟40nm以下多指nmosfet射频噪声的新型紧凑模型

2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI:10.23919/EUMIC.2018.8539965

Jyh-Chyurn Guo, K. Yeh

{"title":"一种精确模拟40nm以下多指nmosfet射频噪声的新型紧凑模型","authors":"Jyh-Chyurn Guo, K. Yeh","doi":"10.23919/EUMIC.2018.8539965","DOIUrl":null,"url":null,"abstract":"A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"153 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs\",\"authors\":\"Jyh-Chyurn Guo, K. Yeh\",\"doi\":\"10.23919/EUMIC.2018.8539965\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"153 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539965\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文建立了一种新的紧凑模型，用于精确模拟40 nm以下多指nmosfet的射频噪声和提取实际本征噪声。该模型可以预测和验证去嵌入前后的多余噪声源，以及各种噪声参数复杂布局依赖的机理，为纳米级CMOS技术中低噪声器件和电路的优化设计提供方便。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs

A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

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