{"title":"短激光脉冲激发下GaN中的热载流子动力学和相干效应","authors":"S. Rudin, E. Bellotti, G. Garrett, M. Wraback","doi":"10.1109/NUSOD.2007.4348995","DOIUrl":null,"url":null,"abstract":"The fast carrier dynamics in GaN under short laser pulse excitation is investigated theoretically, using a density matrix approach, and experimentally, using time-resolved photoluminescence. The rise time of the photoluminescence is determined by carrier scattering with LO phonons .","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"391 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hot Carrier Dynamics and Coherent Effects in GaN under Short Laser Pulse Excitation\",\"authors\":\"S. Rudin, E. Bellotti, G. Garrett, M. Wraback\",\"doi\":\"10.1109/NUSOD.2007.4348995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fast carrier dynamics in GaN under short laser pulse excitation is investigated theoretically, using a density matrix approach, and experimentally, using time-resolved photoluminescence. The rise time of the photoluminescence is determined by carrier scattering with LO phonons .\",\"PeriodicalId\":255219,\"journal\":{\"name\":\"2007 International Conference on Numerical Simulation of Optoelectronic Devices\",\"volume\":\"391 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Conference on Numerical Simulation of Optoelectronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2007.4348995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2007.4348995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot Carrier Dynamics and Coherent Effects in GaN under Short Laser Pulse Excitation
The fast carrier dynamics in GaN under short laser pulse excitation is investigated theoretically, using a density matrix approach, and experimentally, using time-resolved photoluminescence. The rise time of the photoluminescence is determined by carrier scattering with LO phonons .
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