K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic
{"title":"超高速gan - hemt的器件缩放技术","authors":"K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic","doi":"10.1109/DRC.2011.5994530","DOIUrl":null,"url":null,"abstract":"The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN [1] or InGaN back barriers [2], thin AlN top barriers [3], lattice-matched InAlN barriers [4], ultra-short gates [5], and self-aligned gates [6]. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs [7–10], which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Device scaling technologies for ultra-high-speed GaN-HEMTs\",\"authors\":\"K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, D. Brown, S. Burnham, P. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. Asbeck, M. Micovic\",\"doi\":\"10.1109/DRC.2011.5994530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN [1] or InGaN back barriers [2], thin AlN top barriers [3], lattice-matched InAlN barriers [4], ultra-short gates [5], and self-aligned gates [6]. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs [7–10], which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device scaling technologies for ultra-high-speed GaN-HEMTs
The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN [1] or InGaN back barriers [2], thin AlN top barriers [3], lattice-matched InAlN barriers [4], ultra-short gates [5], and self-aligned gates [6]. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs [7–10], which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.