BaFe12O19 based Ferroelectric Memristor for Applications of True Random Number Generator

Ferroelectric memristors are in principle a promising candidate for realizing effective computing in memory, for their advantages of multi-bit storage, ultra-fast switching behavior, and low power consumption. Here, we successfully fabricated the Cu/BaFe12O19/Pt ferroelectric memristive device with multi-resistance state (2 bits), reliable reproducibility (>102), and desired on/off ratio (103). The conductive mechanism of the device is attributed to the variation of ferroelectric barrier, which is verified by first-principle calculations. In addition, based on the randomness of the SET voltage of the devices, we innovatively propose a schematic diagram of true random number generator (TRNG) circuit. This work may pave the way for next-generation ferroelectric memristors and further enable a broad range of multifunctional applications.