基准测试对基于电荷和超越CMOS器件的重要性

A. Marshall, N. Sharma
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引用次数: 0

摘要

由于扩展平面CMOS技术的性能特性在物理上变得更加困难和昂贵,人们已经努力创造新技术。其中一些是CMOS扩展,如Finfet器件。其他是所谓的超越CMOS器件,包括基于电荷的逻辑,如基于隧道场效应管的系统,其他是非基于电荷的,包括纳米磁性结构,自旋电子学器件,先进的基于电荷的器件和各种量子结构。
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The importance of benchmarking for charge-based and beyond CMOS devices
As it has become physically more difficult and more expensive to extend the performance characteristics of planar CMOS technology, there have been many efforts to create new technologies. Some of these are CMOS extensions, such as Finfet devices. Others are the so-called beyond CMOS devices, which include charge-based logic such as Tunnel FET based systems, others are non-charge based, which include nano-magnetic structures, spintronics devices, advanced charge-based devices and a variety of quantum structures.
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