铁电薄膜中纳米点的稳定性

2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI:10.1109/ISAF.2008.4693909

N. Balke, P. Yu, L. Wang, R. Ramesh

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摘要

研究了写入纳米点对Pb(Zr0.2Ti0.8)O3的保留性能。成像电压在研究小的不稳定畴时起着重要的作用。即使成像电压远低于矫顽力电压，畴的边界在成像过程中也会被测量的纳米畴稳定性所强烈影响

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CH003: Stability of nanodots in ferroelectric thin films

Retention properties of written nanodots for Pb(Zr0.2Ti0.8)O3 have been investigated. The imaging voltage plays an important role when investigating small unstable domains. Even with an imaging voltage far below the coercive voltage the boundaries of the domains are switched during imaging by what the measured nanodomain stability is strongly influenced

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2008 17th IEEE International Symposium on the Applications of Ferroelectrics

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