{"title":"膜上微机械伪晶HFET微波炭","authors":"M. Tomáška, M. Klasovitý, M. Masar","doi":"10.1109/MIXDES.2006.1706631","DOIUrl":null,"url":null,"abstract":"This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance","PeriodicalId":318768,"journal":{"name":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On-membrane Micromechanical Pseudomorphic HFET Microwave Char\",\"authors\":\"M. Tomáška, M. Klasovitý, M. Masar\",\"doi\":\"10.1109/MIXDES.2006.1706631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance\",\"PeriodicalId\":318768,\"journal\":{\"name\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2006.1706631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2006.1706631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance
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