微波辅助合成用于存储器件的胶体镍纳米晶体

M. Yadav, R. V. Ravi Shankar, Rohit Sharma
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引用次数: 1

摘要

微波辅助合成胶体镍纳米晶体被认为是一种有效的控制颗粒大小和均匀性的技术。该方法适合于纳米晶体的大规模合成,在存储器件中具有重要的应用价值。在本文中,我们报道了微波辅助合成的胶体镍纳米晶体,其平均尺寸分布为5nm。在二氧化硅晶圆上自旋涂覆胶体镍纳米晶体,了解自旋涂覆工艺在存储器件制造中的可靠性。利用原子力显微镜和能量色散X射线表征方法研究了自旋涂层硅片表面。所合成的纳米晶体用于自旋镀膜工艺制备非易失性存储器件。我们还介绍了制造工艺流程和制造器件的电容电压(C-V)特性。我们的研究结果显示了4 V的显著平带电压位移,这表明存储器件具有良好的存储窗口。
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Microwave Aided Synthesis of Colloidal Nickel Nanocrystals for Memory Device Application
__Microwave assisted synthesis of colloidal Nickel nanocrystals is considered as an efficient technique to control particle size and their uniformity. This method is suitable for large-scale synthesis of the nanocrystals, which can have significant applications in memory devices. In this paper, we report microwave-assisted synthesis of colloidal nickel nanocrystals with an average size distribution of 5 nm. Colloidal nickel nanocrystals are spin coated over silicon dioxide wafer to understand the spin coating process reliability for memory device fabrication. Spin coated wafer surface is studied using atomic force microscopy and energy dispersive X -ray characterization methods. The synthesized nanocrystals are used for fabrication of non-volatile memory devices using spin coating process. We also present the process flow for fabrication and capacitance-voltage (C-V) characteristics of the fabricated device. Our results show significant flat band voltage shift of 4 V that indicates an excellent memory window for memory device.
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