{"title":"GaAs pHEMT瞬态热响应的表征","authors":"B. Schwitter, A. Parker, S. Mahon, M. Heimlich","doi":"10.23919/EUMIC.2018.8539961","DOIUrl":null,"url":null,"abstract":"Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Characterisation of GaAs pHEMT Transient Thermal Response\",\"authors\":\"B. Schwitter, A. Parker, S. Mahon, M. Heimlich\",\"doi\":\"10.23919/EUMIC.2018.8539961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterisation of GaAs pHEMT Transient Thermal Response
Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.
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