{"title":"利用COMSOL多物理场分析FDSOI技术中的ESD二极管","authors":"G. Angelov, Boris D. Dobrichkov, J. Liou","doi":"10.1109/ET.2019.8878662","DOIUrl":null,"url":null,"abstract":"Device simulators are well-established tools for behavior prediction of novel electronic structures. However, the developing process for electrostatic discharge (ESD) devices strongly relies on tape-out measurements and adjustments on well-known IPs, rather than on pure TCAD simulation results. Part of the reasons are concerns over accuracy when fast transient events are simulated and high temperatures are reached. This paper provides data on thermal analysis of ESD diode characteristics in fully depleted silicon on insulator (FDSOI) technology using an unorthodox simulation tool – COMSOL Multiphysics.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermal Analysis of ESD Diode in FDSOI Technology using COMSOL Multiphysics\",\"authors\":\"G. Angelov, Boris D. Dobrichkov, J. Liou\",\"doi\":\"10.1109/ET.2019.8878662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Device simulators are well-established tools for behavior prediction of novel electronic structures. However, the developing process for electrostatic discharge (ESD) devices strongly relies on tape-out measurements and adjustments on well-known IPs, rather than on pure TCAD simulation results. Part of the reasons are concerns over accuracy when fast transient events are simulated and high temperatures are reached. This paper provides data on thermal analysis of ESD diode characteristics in fully depleted silicon on insulator (FDSOI) technology using an unorthodox simulation tool – COMSOL Multiphysics.\",\"PeriodicalId\":306452,\"journal\":{\"name\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2019.8878662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal Analysis of ESD Diode in FDSOI Technology using COMSOL Multiphysics
Device simulators are well-established tools for behavior prediction of novel electronic structures. However, the developing process for electrostatic discharge (ESD) devices strongly relies on tape-out measurements and adjustments on well-known IPs, rather than on pure TCAD simulation results. Part of the reasons are concerns over accuracy when fast transient events are simulated and high temperatures are reached. This paper provides data on thermal analysis of ESD diode characteristics in fully depleted silicon on insulator (FDSOI) technology using an unorthodox simulation tool – COMSOL Multiphysics.