B. Kunert, S. Liebich, M. Zimprich, A. Beyer, S. Ziegler, K. Volz, W. Stolz, N. Hossain, S. Jin, S. Sweeney
{"title":"电泵浦集成III/V激光晶格与硅衬底相匹配","authors":"B. Kunert, S. Liebich, M. Zimprich, A. Beyer, S. Ziegler, K. Volz, W. Stolz, N. Hossain, S. Jin, S. Sweeney","doi":"10.1109/DRC.2011.5994521","DOIUrl":null,"url":null,"abstract":"The enormous development of Silicon (Si) based integrated circuits (ICs) and micro-electronics is based on the downscaling of semiconductor devices. This driving force, however, is approaching fundamental limitations and therefore new technologies are necessary to guarantee future progress in IC functionalities.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate\",\"authors\":\"B. Kunert, S. Liebich, M. Zimprich, A. Beyer, S. Ziegler, K. Volz, W. Stolz, N. Hossain, S. Jin, S. Sweeney\",\"doi\":\"10.1109/DRC.2011.5994521\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The enormous development of Silicon (Si) based integrated circuits (ICs) and micro-electronics is based on the downscaling of semiconductor devices. This driving force, however, is approaching fundamental limitations and therefore new technologies are necessary to guarantee future progress in IC functionalities.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994521\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate
The enormous development of Silicon (Si) based integrated circuits (ICs) and micro-electronics is based on the downscaling of semiconductor devices. This driving force, however, is approaching fundamental limitations and therefore new technologies are necessary to guarantee future progress in IC functionalities.