硅扩散电阻温度传感器的优化设计

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904207

Bin Li, P. Lai, C. Chan, J. Sin

{"title":"硅扩散电阻温度传感器的优化设计","authors":"Bin Li, P. Lai, C. Chan, J. Sin","doi":"10.1109/HKEDM.2000.904207","DOIUrl":null,"url":null,"abstract":"The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n/sup +/ region and high substrate doping, the SRT sensor can function at temperatures up to 400/spl deg/C at a low current of 2 mA.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Optimization of silicon Spreading-Resistance Temperature sensor\",\"authors\":\"Bin Li, P. Lai, C. Chan, J. Sin\",\"doi\":\"10.1109/HKEDM.2000.904207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n/sup +/ region and high substrate doping, the SRT sensor can function at temperatures up to 400/spl deg/C at a low current of 2 mA.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

研究了硅扩展电阻温度传感器的电阻-温度(R-T)特性。实验结果表明，器件结构尺寸、衬底掺杂对器件最高工作温度影响较大，而工艺条件对器件最高工作温度影响较小。SRT传感器具有适当的小圆形n/sup +/区域和高衬底掺杂，可以在高达400/spl度/C的温度下在2 mA的低电流下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Optimization of silicon Spreading-Resistance Temperature sensor

The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n/sup +/ region and high substrate doping, the SRT sensor can function at temperatures up to 400/spl deg/C at a low current of 2 mA.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

自引率

0.00%

发文量