{"title":"自对准TiSi/ sub2 /Si异质纳米晶非易失性存储器","authors":"Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu","doi":"10.1109/DRC.2005.1553075","DOIUrl":null,"url":null,"abstract":"After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub> and Si<sub>4</sub>N<sub>3</sub> et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory\",\"authors\":\"Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu\",\"doi\":\"10.1109/DRC.2005.1553075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub> and Si<sub>4</sub>N<sub>3</sub> et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553075\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
