采用体偏置的可变增益2.4 ghz CMOS低噪声放大器

Mabrouki Aya, T. Thierry, Deval Yann, B. Jean-Baptiste
{"title":"采用体偏置的可变增益2.4 ghz CMOS低噪声放大器","authors":"Mabrouki Aya, T. Thierry, Deval Yann, B. Jean-Baptiste","doi":"10.1109/RME.2009.5201299","DOIUrl":null,"url":null,"abstract":"In this paper, a variable gain CMOS low noise amplifier (LNA) suitable for WiMAX (Worldwide Interoperability for Microwave Access) applications, 2.4 GHz, is reported. The design concept is based on the novel idea of body biasing. In high mode gain the cascode LNA, implemented in a 0.13µm CMOS standard process and supplied under 1.1V, exhibits a power gain of 15.44 dB, a 2.87 dB noise figure (NF), and −4.62 dBm of third order intercept point (IIP3) for a 4.64 mA current consumption and a bulk to source Voltage, VBS, of 0.3V. Tuning VBS to −0.55V, the LNA operates in the low gain mode, achieving 8.23 dB of power gain, 5 dB NF and 6.63 dBm IIP3 under a constrained power consumption of 1.1 mW.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A variable gain 2.4-GHz CMOS low noise amplifier employing body biasing\",\"authors\":\"Mabrouki Aya, T. Thierry, Deval Yann, B. Jean-Baptiste\",\"doi\":\"10.1109/RME.2009.5201299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a variable gain CMOS low noise amplifier (LNA) suitable for WiMAX (Worldwide Interoperability for Microwave Access) applications, 2.4 GHz, is reported. The design concept is based on the novel idea of body biasing. In high mode gain the cascode LNA, implemented in a 0.13µm CMOS standard process and supplied under 1.1V, exhibits a power gain of 15.44 dB, a 2.87 dB noise figure (NF), and −4.62 dBm of third order intercept point (IIP3) for a 4.64 mA current consumption and a bulk to source Voltage, VBS, of 0.3V. Tuning VBS to −0.55V, the LNA operates in the low gain mode, achieving 8.23 dB of power gain, 5 dB NF and 6.63 dBm IIP3 under a constrained power consumption of 1.1 mW.\",\"PeriodicalId\":245992,\"journal\":{\"name\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2009.5201299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2009.5201299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文报道了一种适用于2.4 GHz WiMAX(全球微波接入互操作性)应用的可变增益CMOS低噪声放大器(LNA)。设计理念是基于身体偏置的新思想。在高模式增益下,采用0.13 μ m CMOS标准工艺,在1.1V电压下供电的级联码LNA,在4.64 mA电流消耗和0.3V源电压下,显示出15.44 dB的功率增益,2.87 dB的噪声系数(NF)和- 4.62 dBm的三阶截距(IIP3)。通过将VBS调至−0.55V, LNA工作在低增益模式下,在1.1 mW的约束功耗下,可获得8.23 dB的功率增益、5db的NF和6.63 dBm的IIP3。
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A variable gain 2.4-GHz CMOS low noise amplifier employing body biasing
In this paper, a variable gain CMOS low noise amplifier (LNA) suitable for WiMAX (Worldwide Interoperability for Microwave Access) applications, 2.4 GHz, is reported. The design concept is based on the novel idea of body biasing. In high mode gain the cascode LNA, implemented in a 0.13µm CMOS standard process and supplied under 1.1V, exhibits a power gain of 15.44 dB, a 2.87 dB noise figure (NF), and −4.62 dBm of third order intercept point (IIP3) for a 4.64 mA current consumption and a bulk to source Voltage, VBS, of 0.3V. Tuning VBS to −0.55V, the LNA operates in the low gain mode, achieving 8.23 dB of power gain, 5 dB NF and 6.63 dBm IIP3 under a constrained power consumption of 1.1 mW.
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