{"title":"一种基于tsv的交流-直流转换器架构","authors":"K. Salah","doi":"10.1109/IDT.2013.6727096","DOIUrl":null,"url":null,"abstract":"In this paper, a proposed through silicon via (TSV) structure is used to construct AC-DC converters. This structure is analyzed using 3D electromagnetic full-wave simulators. The results show that the proposed 3D converter exhibits small area with superior performance compared to a 2D transformer, for the same footprint as lossy substrate effects are neglected for low frequency range of interest for DC converters.","PeriodicalId":446826,"journal":{"name":"2013 8th IEEE Design and Test Symposium","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A TSV-based architecture for AC-DC converters\",\"authors\":\"K. Salah\",\"doi\":\"10.1109/IDT.2013.6727096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a proposed through silicon via (TSV) structure is used to construct AC-DC converters. This structure is analyzed using 3D electromagnetic full-wave simulators. The results show that the proposed 3D converter exhibits small area with superior performance compared to a 2D transformer, for the same footprint as lossy substrate effects are neglected for low frequency range of interest for DC converters.\",\"PeriodicalId\":446826,\"journal\":{\"name\":\"2013 8th IEEE Design and Test Symposium\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 8th IEEE Design and Test Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IDT.2013.6727096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 8th IEEE Design and Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2013.6727096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a proposed through silicon via (TSV) structure is used to construct AC-DC converters. This structure is analyzed using 3D electromagnetic full-wave simulators. The results show that the proposed 3D converter exhibits small area with superior performance compared to a 2D transformer, for the same footprint as lossy substrate effects are neglected for low frequency range of interest for DC converters.
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