{"title":"LTCC基板上的宽带倒装微波放大器","authors":"Leiqiang Ma, Le Dong, Yusheng Da, Hongping Li","doi":"10.1109/IWS55252.2022.9977707","DOIUrl":null,"url":null,"abstract":"In this paper, a flip-chip vertical interconnect transition structure is designed based on the existing integration process, and a 2GHz∼6GHz amplifier chip is integrated on LTCC circuit with leadless interconnection by using the flip-chip vertical interconnect transition structure. The integrated circuit is simulated, fabricated and measured, the simulated and measured results show a good match. It is a good reference for application of high density integration microwave microsystems.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Broadband Flip-Chip Microwave Amplifier on a LTCC Substrate\",\"authors\":\"Leiqiang Ma, Le Dong, Yusheng Da, Hongping Li\",\"doi\":\"10.1109/IWS55252.2022.9977707\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a flip-chip vertical interconnect transition structure is designed based on the existing integration process, and a 2GHz∼6GHz amplifier chip is integrated on LTCC circuit with leadless interconnection by using the flip-chip vertical interconnect transition structure. The integrated circuit is simulated, fabricated and measured, the simulated and measured results show a good match. It is a good reference for application of high density integration microwave microsystems.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977707\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband Flip-Chip Microwave Amplifier on a LTCC Substrate
In this paper, a flip-chip vertical interconnect transition structure is designed based on the existing integration process, and a 2GHz∼6GHz amplifier chip is integrated on LTCC circuit with leadless interconnection by using the flip-chip vertical interconnect transition structure. The integrated circuit is simulated, fabricated and measured, the simulated and measured results show a good match. It is a good reference for application of high density integration microwave microsystems.