用III-V型化合物半导体通道模拟纳米n- mosfet:从能带结构、静电学和传输到TCAD的先进模型

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268384

L. Selmi, E. Caruso, S. Carapezzi, M. Visciarelli, E. Gnani, N. Zagni, P. Pavan, P. Palestri, D. Esseni, A. Gnudi, S. Reggiani, F. Puglisi, G. Verzellesi

{"title":"用III-V型化合物半导体通道模拟纳米n- mosfet:从能带结构、静电学和传输到TCAD的先进模型","authors":"L. Selmi, E. Caruso, S. Carapezzi, M. Visciarelli, E. Gnani, N. Zagni, P. Pavan, P. Palestri, D. Esseni, A. Gnudi, S. Reggiani, F. Puglisi, G. Verzellesi","doi":"10.1109/IEDM.2017.8268384","DOIUrl":null,"url":null,"abstract":"We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD\",\"authors\":\"L. Selmi, E. Caruso, S. Carapezzi, M. Visciarelli, E. Gnani, N. Zagni, P. Pavan, P. Palestri, D. Esseni, A. Gnudi, S. Reggiani, F. Puglisi, G. Verzellesi\",\"doi\":\"10.1109/IEDM.2017.8268384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"164 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们回顾了基于全量子输运、半经典多谷/多子带输运和TCAD模型的短通道III-V化合物半导体n- mosfet模型的一些最先进的解决方案和最新发展。每一种方法的优缺点，以及它们可以提供的见解，都用最近的技术发展和文献中的例子来说明。强调了在TCAD级别上最需要改进和实现的领域。

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Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.

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2017 IEEE International Electron Devices Meeting (IEDM)

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