{"title":"模拟深亚微米mosfet的栅极相关高频和噪声特性","authors":"R. Kraus, G. Knoblinger","doi":"10.1109/CICC.2002.1012798","DOIUrl":null,"url":null,"abstract":"This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series to the gate capacitance. The real part of input impedance, nonquasistatic charge variations and induced gate noise with correlation to the drain noise are the results. A model equation of the induced gate noise is developed for MOSFETs with very short channel lengths. Comparisons with measurements verify the accuracy of the model and its validity for short and long channel transistors.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"103 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs\",\"authors\":\"R. Kraus, G. Knoblinger\",\"doi\":\"10.1109/CICC.2002.1012798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series to the gate capacitance. The real part of input impedance, nonquasistatic charge variations and induced gate noise with correlation to the drain noise are the results. A model equation of the induced gate noise is developed for MOSFETs with very short channel lengths. Comparisons with measurements verify the accuracy of the model and its validity for short and long channel transistors.\",\"PeriodicalId\":209025,\"journal\":{\"name\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"volume\":\"103 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2002.1012798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs
This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series to the gate capacitance. The real part of input impedance, nonquasistatic charge variations and induced gate noise with correlation to the drain noise are the results. A model equation of the induced gate noise is developed for MOSFETs with very short channel lengths. Comparisons with measurements verify the accuracy of the model and its validity for short and long channel transistors.
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