A. R. Molto, R. T. Doria, M. de Souza, M. Pavanello
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On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs
This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density and the KF constant, which can be used in BSIM SPICE-like models, are determined.
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