水热法低温制备铋相关铁电体

A. Inoue, Tho Truong Nguyen, M. Noda, M. Okuyama
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引用次数: 4

摘要

采用水热合成法制备了BIT粉末。在KOH浓度小于2.0 m时,随着KOH浓度的增加,XRD强度增大,结果表明BIT粉末的形成受KOH浓度的影响,产物呈黄灰色,由0.5 ~ 1.5 μ m的微观片片状片状组成。处理温度为160 -240℃,随保温时间的增加而降低。在Bi(OH)3 0.14 M和KOH 0.01 M的混合溶液中,采用溶胶-凝胶法和水热处理3 h,在350℃以下制备了BIT薄膜。在优化条件下制备的BIT薄膜具有良好的方形磁滞回线。当施加5 V时,零电场下的极化为0.9 μ c /cm2,电流密度为8.1 × 10-6 A/cm2。
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Low Temperature Preparation of Bismuth-Related Ferroelectrics by Hydrothermal Synthesis
BIT powder is prepared by hydrothermal synthesis. It is found that the formation of BIT powder is affected by KOH concentration because the XRD intensity increases with increasing the KOH concentration less than 2.0 M. The products are yellowish gray and consist of microscopic lamellar platelets of 0.5 -1.5 mum. Treatment tempereatures are 160 -240 deg C and is decreased with increasing the holding time. The BIT thin films are prepared below 350 deg C by the sol-gel method and hydrothermal treatment for 3 h in Bi(OH)3 0.14 M and KOH 0.01 M mixture solution. The BIT thin film prepared under the optimized condition have hysteresis loops with a good squareness. When 5 V is applied to the BIT film, the polarization at zero electric field is 0.9 muC/cm2 and current density is 8.1x10-6 A/cm2.
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