电源应用异质结构PIN整流二极管

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635400

B. Mazhari, M. Sinha, J. Dixit

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引用次数: 3

摘要

我们建议在PIN整流二极管中使用异质结构以获得更快的开关速度。结果表明，在高掺杂P层中采用小带隙材料，在本征区采用宽带隙材料，可以显著降低反向恢复时间，同时不影响击穿和正向导通电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heterostructure PIN Rectifier Diode For Power Applications

We propose use of heterostructures in PIN rectifiler diodes for obtaining faster switching speed. It is shown that by employing a small bandgap material in the heavily doped P layer and a wide bandgap material in the intrinsic region, reverse recovery time can be significantly lowered without compromising either the breakdown or the forward ON voltage.

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2005 IEEE Conference on Electron Devices and Solid-State Circuits

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