功率二极管宇宙辐射失效的数值分析

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044161

Christoph Weis, S. Aschauer, G. Wachutka, A. Hartl, F. Hille, F. Pfirsch

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引用次数: 13

摘要

由于宇宙辐射引起的效应，硅功率二极管可能会发生热破坏。为了解释失效机理，我们进行了电热耦合器件模拟。结果与离子辐照实验结果进行了比较。我们发现在入射离子沉积的地方有很强的加热，温度升高，这可以解释旧材料的熔化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical analysis of cosmic radiation-induced failures in power diodes

Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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