三维集成电路键前测试中随机TSV缺陷识别的启发式方法

Tanusree Kaibartta, G. Biswas, D. K. Das
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引用次数: 2

摘要

三维集成电路(3D IC)的可能性被认为是克服二维集成电路(2D IC)所面临的困难的一种选择。在这些技术中,硅通孔(tsv)是最有前途的一种,因为它有助于减少互连长度、延迟和功耗。尽管有优点,但它引入了不同类型的缺陷,最终使整个集成电路出现故障。因此,测试tsv是非常必要的。根据时间的不同,测试可以分为粘接前和粘接后两种类型。在绑定前TSV测试中,TSV在会话中进行测试。在本文中,我们的目标是尽可能减少粘接前TSV测试次数,从而减少整体测试时间。为了减少测试时间,我们需要减少个体TSV测试,增加群体TSV测试。
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Heuristic Approach for Identification of Random TSV Defects in 3D IC During Pre-bond Testing
The possibility of 3D integrated circuit (3D IC) has been considered as a choice to overcome the difficulties faced by two-dimensional integrated circuits (2D IC). Several technologies exist to connect the layers in 3D IC. Among these technologies through-silicon vias (TSVs) is the promising one since it helps to reduce interconnect length, delays and power consumption. In spite of the advantages it introduces different types of defects which ultimately make an entire IC faulty. Thus, testing of TSVs is an important necessity. Depending on the timing, the testing may be of two types -pre-bond and post-bond. In pre-bond TSV testing TSVs are tested in sessions. In this paper our objective is to reduce the pre-bond TSV test sessions as much as possible, so that overall testing time decreases. To reduce test sessions we need to reduce the individual TSV testing and increase group wise TSV testing.
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