在2 μιη下工作的绝缘体上硅光栅耦合器:器件设计、制造和表征

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242318

Shengqiang Xu, Xin Guo, Yuan Dong, Wei Wang, Hong Wang, X. Gong, Y. Yeo

{"title":"在2 μιη下工作的绝缘体上硅光栅耦合器:器件设计、制造和表征","authors":"Shengqiang Xu, Xin Guo, Yuan Dong, Wei Wang, Hong Wang, X. Gong, Y. Yeo","doi":"10.23919/SNW.2017.8242318","DOIUrl":null,"url":null,"abstract":"Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si-on-insulator grating coupler operating at 2 μιη: Device design, fabrication, and characterization\",\"authors\":\"Shengqiang Xu, Xin Guo, Yuan Dong, Wei Wang, Hong Wang, X. Gong, Y. Yeo\",\"doi\":\"10.23919/SNW.2017.8242318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

针对通信应用，设计并优化了基于220nm绝缘体硅基板的2 μm波长光栅耦合器。耦合效率约为18%，与仿真结果一致，可用于基于2 μτη的光子集成电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Si-on-insulator grating coupler operating at 2 μιη: Device design, fabrication, and characterization

Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量