{"title":"基于PHYSERD的软错误率高精度估计与电路仿真","authors":"T. Kato, T. Uemura, H. Matsuyama","doi":"10.1109/SISPAD.2014.6931634","DOIUrl":null,"url":null,"abstract":"Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate. We find that circuit simulation has a significant effect on these contributions and is essential to the prediction of soft error rate.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-accuracy estimation of soft error rate using PHYSERD with circuit simulation\",\"authors\":\"T. Kato, T. Uemura, H. Matsuyama\",\"doi\":\"10.1109/SISPAD.2014.6931634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate. We find that circuit simulation has a significant effect on these contributions and is essential to the prediction of soft error rate.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"191 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-accuracy estimation of soft error rate using PHYSERD with circuit simulation
Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate. We find that circuit simulation has a significant effect on these contributions and is essential to the prediction of soft error rate.
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