反应射频磁控溅射制备InN薄膜的形貌和织构

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650626

M. Braic, N. C. Zoita, V. Braic

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引用次数: 1

摘要

我们报道了在纯N2气氛下，通过反应性射频磁控溅射成功地在未蚀刻的无成核缓冲的Si晶片上沉积了多晶InN薄膜。研究了沉积压力和沉积温度对InN薄膜结构和形态特征的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the morphology and texture of InN thin films deposited by reactive RF-magnetron sputtering

We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.

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CAS 2010 Proceedings (International Semiconductor Conference)

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