一种采用堆叠耦合开关电感和55纳米CMOS共调谐缓冲器的25-37GHz压控振荡器,用于多频段5G毫米波应用

Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang
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摘要

本文提出了一种毫米瓦压控振荡器(VCO),采用堆叠耦合开关差分电感(SSDI)和混合模数变容管阵列(HVA)同时实现宽调谐范围和低相位噪声。为了减小压控振荡器输出功率的变化,还开发了频率共调谐压控振荡器缓冲器。该VCO采用55纳米CMOS工艺制造,可实现41.14%(24.48至37.16 GHz)的超宽频率调谐范围,在10 MHz偏移时相位噪声低至-124.91 dBc/Hz。fmt为-192.67 dBc/Hz,在整个调谐范围内输出功率变化小于3db。
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A 25–37GHz VCO Employing Stacked-Coupled Switched Inductor and Co-Tuned Buffer in 55nm CMOS for Multi-Band 5G mmW Applications
This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.
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