Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang
{"title":"一种采用堆叠耦合开关电感和55纳米CMOS共调谐缓冲器的25-37GHz压控振荡器,用于多频段5G毫米波应用","authors":"Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang","doi":"10.1109/SiRF51851.2021.9383369","DOIUrl":null,"url":null,"abstract":"This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 25–37GHz VCO Employing Stacked-Coupled Switched Inductor and Co-Tuned Buffer in 55nm CMOS for Multi-Band 5G mmW Applications\",\"authors\":\"Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang\",\"doi\":\"10.1109/SiRF51851.2021.9383369\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.\",\"PeriodicalId\":166842,\"journal\":{\"name\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"99 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF51851.2021.9383369\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF51851.2021.9383369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 25–37GHz VCO Employing Stacked-Coupled Switched Inductor and Co-Tuned Buffer in 55nm CMOS for Multi-Band 5G mmW Applications
This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.