Han Dejun, K.T. Chan, Li Guohui, Wang Wen-xun, E. Zhu
{"title":"高能注入GaAs衬底制备半绝缘/n/sup +/-结构","authors":"Han Dejun, K.T. Chan, Li Guohui, Wang Wen-xun, E. Zhu","doi":"10.1109/HKEDM.1994.395130","DOIUrl":null,"url":null,"abstract":"A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A semi-insulating/n/sup +/-structure in GaAs substrates by high energy implantation\",\"authors\":\"Han Dejun, K.T. Chan, Li Guohui, Wang Wen-xun, E. Zhu\",\"doi\":\"10.1109/HKEDM.1994.395130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections.<<ETX>>\",\"PeriodicalId\":206109,\"journal\":{\"name\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"volume\":\"283 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1994.395130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A semi-insulating/n/sup +/-structure in GaAs substrates by high energy implantation
A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections.<>
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