Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit
{"title":"在3英寸InP生产工艺上实现0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic的高可靠性","authors":"Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit","doi":"10.1109/GAAS.2001.964372","DOIUrl":null,"url":null,"abstract":"The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process\",\"authors\":\"Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit\",\"doi\":\"10.1109/GAAS.2001.964372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964372\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process
The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.
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