表面离子阱的低成本接地集成

Hongyu Li, W. Seit, Hwang Gilho, P. Zhao, J. Tao, C. S. Tan
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引用次数: 0

摘要

硅衬底为表面离子阱器件的制造提供了集成平台。由于施加的高射频电压($> 100\ mathm {V}$)和功能内所需的低射频损耗,表面离子阱的接地金属是必要的。采用表面离子阱将高电阻率硅衬底与浮金属接地和低品位硅衬底与接接地金属相结合。在47.1 MHz频率下观察了不同接地金属离子阱器件的谐振曲线。曲线具有相似的谐振功率。
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Low Cost Grounding Integration for Surface Ion Trap
Si substrate provide the integration platform for surface ion trap device fabrication. Grounding metal for the surface ion trap is necessary because of high RF voltage ($> 100\mathrm{V}$) applied and lower RF loss required within functionality. High resistivity Si substrate with floating metal grounding and low-grade Si substrate with connected grounding metal were integrated with surface ion trap. Ion trap resonance curves were observed at 47.1 MHz frequency for ion trap devices with different grounding metal. The curves have similar resonant power.
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