D. Kumar, Kamaljeet Singh, Kumar Sangam, A. V. Nirmal
{"title":"数据发射机用GaN器件实现小型连续波x波段功率放大器","authors":"D. Kumar, Kamaljeet Singh, Kumar Sangam, A. V. Nirmal","doi":"10.1109/imarc49196.2021.9714629","DOIUrl":null,"url":null,"abstract":"Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Realization of compact Continuous Wave-based X-Band Power Amplifier using GaN device for Data Transmitter Applications\",\"authors\":\"D. Kumar, Kamaljeet Singh, Kumar Sangam, A. V. Nirmal\",\"doi\":\"10.1109/imarc49196.2021.9714629\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714629\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Realization of compact Continuous Wave-based X-Band Power Amplifier using GaN device for Data Transmitter Applications
Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.
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