A. Afiff, A. Samanta, T. Hasan, A. Udhiarto, D. Hartanto, H. Sudibyo, M. Tabe, D. Moraru
{"title":"用高偏置稳定性图探测施主量子点对选择性掺硅纳米晶体管的影响","authors":"A. Afiff, A. Samanta, T. Hasan, A. Udhiarto, D. Hartanto, H. Sudibyo, M. Tabe, D. Moraru","doi":"10.23919/SNW.2017.8242279","DOIUrl":null,"url":null,"abstract":"We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility of probing donor-QDs from center to near the lead edge using high-bias stability diagrams. We also observe and model the changes due to purposely shifted positions of the selectively-doped area.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Probing the impact of donor quantum dots with high-bias stability diagrams in selectively-doped Si nanoscale transistors\",\"authors\":\"A. Afiff, A. Samanta, T. Hasan, A. Udhiarto, D. Hartanto, H. Sudibyo, M. Tabe, D. Moraru\",\"doi\":\"10.23919/SNW.2017.8242279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility of probing donor-QDs from center to near the lead edge using high-bias stability diagrams. We also observe and model the changes due to purposely shifted positions of the selectively-doped area.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Probing the impact of donor quantum dots with high-bias stability diagrams in selectively-doped Si nanoscale transistors
We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility of probing donor-QDs from center to near the lead edge using high-bias stability diagrams. We also observe and model the changes due to purposely shifted positions of the selectively-doped area.