1.55 /spl mu/m InGaAs/InP MQW-DFB激光二极管可靠性的经验预测方法

1997 Proceedings 47th Electronic Components and Technology Conference Pub Date : 1997-05-18 DOI:10.1109/ECTC.1997.606338

N. Hwang, S. Kang, H. Lee, Seong-Su Park, Min-Kyu Song, K. Pyun

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引用次数: 1

摘要

提出了1.55 /spl μ m InGaAs/InP MQW-DFB激光二极管(LD)寿命投影的经验方法。在1500小时加速老化试验的基础上，确定了LD降解与工作电压、环境温度之间的关系。该方法可以通过确定热电压比来预测lcd的寿命。

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An empirical reliability prediction method for 1.55 /spl mu/m InGaAs/InP MQW-DFB laser diodes

An empirical method for lifetime projection of 1.55 /spl mu/m InGaAs/InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio.

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1997 Proceedings 47th Electronic Components and Technology Conference

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