D. Jishiashvili, Z. Shiolashvili, R. Janelidze, V. Gobronidze, E. Kutelia, L. Mosidze, I. Nakhutsrishvili, M. Katsiashvili
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Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications
Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconductor (MIS) transistors at least by 4 orders of magnitude. Fabrication of MIS integrated circuits on the basis of a-Ge:(O,N) films can enlarge the utilization of these advantageous devices in radioactive environment (space, nuclear power-plants etc.).
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