不同结构UTBB MOSFET的光敏性能评价

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782896

Liqiao Liu, Xiaoyan Liu, G. Du

{"title":"不同结构UTBB MOSFET的光敏性能评价","authors":"Liqiao Liu, Xiaoyan Liu, G. Du","doi":"10.23919/SNW.2019.8782896","DOIUrl":null,"url":null,"abstract":"This paper provided a photosensitive performance evaluation of UTBB MOSFET with different structures. The UTBB MOSFET can achieve photosensitive function by integrating a doping well or photodiode under the BOX. With doping well under the BOX, the UTBB MOSFET is more sensitive to light. On the other hand, the saturation exposure time of UTBB with photodiode is longer.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of Photosensitive Performance of Different Structured UTBB MOSFET\",\"authors\":\"Liqiao Liu, Xiaoyan Liu, G. Du\",\"doi\":\"10.23919/SNW.2019.8782896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provided a photosensitive performance evaluation of UTBB MOSFET with different structures. The UTBB MOSFET can achieve photosensitive function by integrating a doping well or photodiode under the BOX. With doping well under the BOX, the UTBB MOSFET is more sensitive to light. On the other hand, the saturation exposure time of UTBB with photodiode is longer.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文对不同结构的UTBB MOSFET进行了光敏性能评价。UTBB MOSFET可以通过在BOX下集成掺杂阱或光电二极管来实现光敏功能。由于在BOX下掺杂良好，UTBB MOSFET对光更敏感。另一方面，带光电二极管的UTBB的饱和曝光时间更长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Evaluation of Photosensitive Performance of Different Structured UTBB MOSFET

This paper provided a photosensitive performance evaluation of UTBB MOSFET with different structures. The UTBB MOSFET can achieve photosensitive function by integrating a doping well or photodiode under the BOX. With doping well under the BOX, the UTBB MOSFET is more sensitive to light. On the other hand, the saturation exposure time of UTBB with photodiode is longer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量