{"title":"VLSI互连布局对电迁移性能的影响","authors":"E.M. Atakov, T. Sriram, D. Dunnell, S. Pizzanello","doi":"10.1109/RELPHY.1998.670668","DOIUrl":null,"url":null,"abstract":"We characterized the reliability of multiple-via contacts, as well as the impact of the contact current direction on the failure statistics and short-length effects in Ti-Al(Cu)-Ti-TiN lines. A significant difference between the sheet resistances of the top and bottom shunting layers results in a bimodal failure time distribution for the downward electron flow direction. It also causes a significant difference in the short-length resistance saturation for the two current directions.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Effect of VLSI interconnect layout on electromigration performance\",\"authors\":\"E.M. Atakov, T. Sriram, D. Dunnell, S. Pizzanello\",\"doi\":\"10.1109/RELPHY.1998.670668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We characterized the reliability of multiple-via contacts, as well as the impact of the contact current direction on the failure statistics and short-length effects in Ti-Al(Cu)-Ti-TiN lines. A significant difference between the sheet resistances of the top and bottom shunting layers results in a bimodal failure time distribution for the downward electron flow direction. It also causes a significant difference in the short-length resistance saturation for the two current directions.\",\"PeriodicalId\":196556,\"journal\":{\"name\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1998.670668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of VLSI interconnect layout on electromigration performance
We characterized the reliability of multiple-via contacts, as well as the impact of the contact current direction on the failure statistics and short-length effects in Ti-Al(Cu)-Ti-TiN lines. A significant difference between the sheet resistances of the top and bottom shunting layers results in a bimodal failure time distribution for the downward electron flow direction. It also causes a significant difference in the short-length resistance saturation for the two current directions.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
