{"title":"非晶态HfO2 ReRAM细胞的光子发射显微镜研究","authors":"F. Stellari, L. Ocola, E. Wu, T. Ando, P. Song","doi":"10.1109/IPFA55383.2022.9915718","DOIUrl":null,"url":null,"abstract":"In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"17 2-3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells\",\"authors\":\"F. Stellari, L. Ocola, E. Wu, T. Ando, P. Song\",\"doi\":\"10.1109/IPFA55383.2022.9915718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.\",\"PeriodicalId\":378702,\"journal\":{\"name\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"17 2-3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA55383.2022.9915718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells
In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.
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