dsg - mosfet: PCMS方法在FETMOSS和CMS在Silvaco TCAD中的比较仿真研究

M. Salem, M. Elbanna, M. Abouelatta, Ahmed Saeed, A. Shaker
{"title":"dsg - mosfet: PCMS方法在FETMOSS和CMS在Silvaco TCAD中的比较仿真研究","authors":"M. Salem, M. Elbanna, M. Abouelatta, Ahmed Saeed, A. Shaker","doi":"10.1109/NILES53778.2021.9600534","DOIUrl":null,"url":null,"abstract":"The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational time is concerned. In this work, a comparison study between PCMS using our developed FETMOSS simulator and CMS using Silvaco TCAD is carried out. The simulation is performed on a set of short-channel DG-MOSFETs. The accuracy at room temperature is found to be less than 8% along the whole range of the supply voltage. Based on this study, the PCMS approach in FETMOSS simulator is validated and proved to trace device performance in reasonable times compared to the TCAD high computational times.","PeriodicalId":249153,"journal":{"name":"2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD\",\"authors\":\"M. Salem, M. Elbanna, M. Abouelatta, Ahmed Saeed, A. Shaker\",\"doi\":\"10.1109/NILES53778.2021.9600534\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational time is concerned. In this work, a comparison study between PCMS using our developed FETMOSS simulator and CMS using Silvaco TCAD is carried out. The simulation is performed on a set of short-channel DG-MOSFETs. The accuracy at room temperature is found to be less than 8% along the whole range of the supply voltage. Based on this study, the PCMS approach in FETMOSS simulator is validated and proved to trace device performance in reasonable times compared to the TCAD high computational times.\",\"PeriodicalId\":249153,\"journal\":{\"name\":\"2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NILES53778.2021.9600534\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NILES53778.2021.9600534","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用分离奇偶模解的部分耦合模式空间(PCMS)方法可以有效地模拟dg - mosfet中的量子输运。该技术结合了耦合模式空间(CMS)在精度方面和非耦合模式空间(UMS)在减少计算时间方面的优点。在这项工作中,我们对使用我们开发的FETMOSS模拟器的PCMS和使用Silvaco TCAD的CMS进行了比较研究。仿真是在一组短通道dg - mosfet上进行的。在整个电源电压范围内,室温下的精度小于8%。基于本研究,在FETMOSS模拟器中验证了PCMS方法,并证明了与TCAD的高计算时间相比,PCMS方法可以在合理的时间内跟踪器件性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD
The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational time is concerned. In this work, a comparison study between PCMS using our developed FETMOSS simulator and CMS using Silvaco TCAD is carried out. The simulation is performed on a set of short-channel DG-MOSFETs. The accuracy at room temperature is found to be less than 8% along the whole range of the supply voltage. Based on this study, the PCMS approach in FETMOSS simulator is validated and proved to trace device performance in reasonable times compared to the TCAD high computational times.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET GSK-RL: Adaptive Gaining-sharing Knowledge algorithm using Reinforcement Learning The Fluorescent Effect of Chitosan Magnetitic Nanoparticles for Near-Infrared Imaging Facility layout and supply chain management of food service industries: A case study Investigation of root causes of order unfulfillment: A Logistics case study
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1