Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu
{"title":"基于0.5 um InP DHBT晶体管的140-190 GHz放大器","authors":"Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu","doi":"10.1109/ICCPS.2015.7454173","DOIUrl":null,"url":null,"abstract":"A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"6 9-10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 140–190 GHz amplifier based on 0.5-um InP DHBT transistor\",\"authors\":\"Xiao Li, Oupeng Li, Y. Sun, Wei Cheng, Lei Wang, R. Xu\",\"doi\":\"10.1109/ICCPS.2015.7454173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.\",\"PeriodicalId\":319991,\"journal\":{\"name\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"volume\":\"6 9-10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCPS.2015.7454173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCPS.2015.7454173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 140–190 GHz amplifier based on 0.5-um InP DHBT transistor
A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.
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