一种dc - 45ghz变质HEMT行波放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964363

R. Leoni, S. Lichwala, J. G. Hunt, C. Whelan, P. Marsh, W. Hoke, T. Kazior

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引用次数: 21

摘要

变质HEMT (MHEMT)技术能够在基于GaAs的HEMT可制造性和成本水平上提供基于InP的HEMT性能。这使得MHEMT成为低噪声、高频和宽带应用的一个有吸引力的替代方案。作者描述了DC-45 GHz MHEMT行波放大器(TWA)的性能，该放大器非常适合宽带应用，如40gb /s光纤接收器。该放大器的典型噪声系数为2db，输出功率超过3dbm。

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A DC-45 GHz metamorphic HEMT traveling wave amplifier

Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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