具有高外量子效率(bbb70 %)的亚微米厚InGaAs宽带(400-1700 nm)光电探测器

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830388

Dae-Myeong Geum, Jinha Lim, Ju-Hwan Jang, Seungyeop Ahn, S. Kim, J. Shim, Bong-Ho Kim, Juhyuk Park, Woojin Baek, Jaeyong Jeong, Sanghyeon Kim

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引用次数: 2

摘要

通过导模共振结构和表面层减薄工艺，成功制备了具有广谱覆盖(400 ~ 1700 nm)和高外量子效率(EQE)(>70%)的亚微米厚InGaAs光电探测器。在500 nm厚的InGaAs吸收层，在1000 nm处EQE为83.8%，1550 nm处EQE为65.5%。与之前的结果相比，厚度减少了6.8倍，同时实现了相当的QE。

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A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)

A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved.

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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