J. He, Y. Song, X. Niu, B. Li, X. Zhang, R. Huang, M. Chan, Y. Wang
{"title":"Punsim:一种先进的基于表面电位的MOSFET模型","authors":"J. He, Y. Song, X. Niu, B. Li, X. Zhang, R. Huang, M. Chan, Y. Wang","doi":"10.1109/MIXDES.2006.1706549","DOIUrl":null,"url":null,"abstract":"This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; accurate description of inversion charge; Physics based channel current equation and calculation; self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity","PeriodicalId":318768,"journal":{"name":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Punsim: an advanced surface potential based MOSFET model\",\"authors\":\"J. He, Y. Song, X. Niu, B. Li, X. Zhang, R. Huang, M. Chan, Y. Wang\",\"doi\":\"10.1109/MIXDES.2006.1706549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; accurate description of inversion charge; Physics based channel current equation and calculation; self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity\",\"PeriodicalId\":318768,\"journal\":{\"name\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2006.1706549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2006.1706549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Punsim: an advanced surface potential based MOSFET model
This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; accurate description of inversion charge; Physics based channel current equation and calculation; self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity
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