{"title":"埋栅InAlAs/InGaAs hemt的蒙特卡罗模拟","authors":"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura","doi":"10.1109/ICIPRM.2013.6562605","DOIUrl":null,"url":null,"abstract":"We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance g<sub>m_max</sub> and gate capacitance C<sub>g</sub> increase with increasing the buried depth d. The extent of increase in the g<sub>m_max</sub> is more than that in C<sub>g</sub>. As a result, the cutoff frequency f<sub>T</sub> increases with increase the buried depth d. These phenomena agree with our previous experimental results.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate\",\"authors\":\"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura\",\"doi\":\"10.1109/ICIPRM.2013.6562605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance g<sub>m_max</sub> and gate capacitance C<sub>g</sub> increase with increasing the buried depth d. The extent of increase in the g<sub>m_max</sub> is more than that in C<sub>g</sub>. As a result, the cutoff frequency f<sub>T</sub> increases with increase the buried depth d. These phenomena agree with our previous experimental results.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate
We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance gm_max and gate capacitance Cg increase with increasing the buried depth d. The extent of increase in the gm_max is more than that in Cg. As a result, the cutoff frequency fT increases with increase the buried depth d. These phenomena agree with our previous experimental results.
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