F. Sato, T. Hashimoto, T. Tashiro, T. Tatsumi, M. Hiroi, T. Niino
{"title":"一种新的自对准HBTs选择性SiGe外延生长技术","authors":"F. Sato, T. Hashimoto, T. Tashiro, T. Tatsumi, M. Hiroi, T. Niino","doi":"10.1109/VLSIT.1992.200646","DOIUrl":null,"url":null,"abstract":"A selective epitaxial growth (SEG) technology using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/ under cold-wall ultra-high-vacuum (UHV)/CVD conditions is described. By using this technology, a self-aligned SiGe HBT with selective epitaxial base is realized. This technology also makes possible the void-free selective growth of SiGe/Si epitaxial layers on Si under polysilicon with overhanging structure, as well as on the open region. As for the transistor characteristics, h/sub FE/ of 100 and BV/sub CEO/ of 5.0 V were obtained.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A novel selective SiGe epitaxial growth technology for self-aligned HBTs\",\"authors\":\"F. Sato, T. Hashimoto, T. Tashiro, T. Tatsumi, M. Hiroi, T. Niino\",\"doi\":\"10.1109/VLSIT.1992.200646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A selective epitaxial growth (SEG) technology using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/ under cold-wall ultra-high-vacuum (UHV)/CVD conditions is described. By using this technology, a self-aligned SiGe HBT with selective epitaxial base is realized. This technology also makes possible the void-free selective growth of SiGe/Si epitaxial layers on Si under polysilicon with overhanging structure, as well as on the open region. As for the transistor characteristics, h/sub FE/ of 100 and BV/sub CEO/ of 5.0 V were obtained.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel selective SiGe epitaxial growth technology for self-aligned HBTs
A selective epitaxial growth (SEG) technology using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/ under cold-wall ultra-high-vacuum (UHV)/CVD conditions is described. By using this technology, a self-aligned SiGe HBT with selective epitaxial base is realized. This technology also makes possible the void-free selective growth of SiGe/Si epitaxial layers on Si under polysilicon with overhanging structure, as well as on the open region. As for the transistor characteristics, h/sub FE/ of 100 and BV/sub CEO/ of 5.0 V were obtained.<>
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