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引用次数: 11

摘要

采用深度RIE和XeF/sub / gas刻蚀法制备了角共振硅陀螺仪。利用这两种蚀刻方法,可以非常精确地制造出在其质量厚度中心有光束的传感器。该传感器采用玻璃-硅-玻璃结构,谐振腔采用静电激励,由角速度引起的振动采用电容测量。获得的传感器灵敏度为2.1 fF/(度/秒)。
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Silicon angular resonance gyroscope by deep ICPRIE and XeF/sub 2/ gas etching
An angular resonance silicon gyroscope was fabricated by deep RIE and XeF/sub 2/ gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg/sec).
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