{"title":"一种新型、高分辨率、非接触式通道温度测量技术","authors":"Q. Kim, B. Stark, S. Kayali","doi":"10.1109/RELPHY.1998.670458","DOIUrl":null,"url":null,"abstract":"An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A novel, high resolution, non-contact channel temperature measurement technique\",\"authors\":\"Q. Kim, B. Stark, S. Kayali\",\"doi\":\"10.1109/RELPHY.1998.670458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.\",\"PeriodicalId\":196556,\"journal\":{\"name\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"volume\":\"198 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-03-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1998.670458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel, high resolution, non-contact channel temperature measurement technique
An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.
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