{"title":"二极管级联量子阱VCSEL","authors":"K. Ebeling, M. Grabherr, R. Jager, R. Michalzik","doi":"10.1109/LEOSST.1997.619105","DOIUrl":null,"url":null,"abstract":"Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diode cascade quantum well VCSEL\",\"authors\":\"K. Ebeling, M. Grabherr, R. Jager, R. Michalzik\",\"doi\":\"10.1109/LEOSST.1997.619105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.
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