{"title":"4\" InP(Fe)衬底用于HBTs生产的评价","authors":"D. A. Clark","doi":"10.1109/GAAS.2001.964373","DOIUrl":null,"url":null,"abstract":"Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4\" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evaluation of 4\\\" InP(Fe) substrates for production of HBTs\",\"authors\":\"D. A. Clark\",\"doi\":\"10.1109/GAAS.2001.964373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4\\\" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of 4" InP(Fe) substrates for production of HBTs
Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.
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